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FCA16N60 600V N-Channel MOSFET
SuperFET
FCA16N60 600V N-Channel MOSFET
Features
* 650V @TJ = 150C * Typ. Rds(on)=0.22 * Ultra low gate charge (typ. Qg=55nC) * Low effective output capacitance (typ. Coss.eff=110pF) * 100% avalanche tested
November 2005 TM
Description
SuperFETTM is, Fairchild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
D
G GDS
TO-3P
FCA Series
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C
(Note 2) (Note 1) (Note 1) (Note 3)
Parameter
- Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed
(Note 1)
FCA16N60
600 16 10.1 48 30 450 16 16.7 4.5 167 1.33 -55 to +150 300
Unit
V A A A V mJ A mJ V/ns W W/C C C
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RJC RJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
FCA16N60
0.75 41.7
Unit
C/W C/W
(c)2005 Fairchild Semiconductor Corporation
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FCA16N60 REV. A
FCA16N60 600V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
FCA16N60
Device
FCA16N60
Package
TO-3P
TC = 25C unless otherwise noted
Reel Size
-
Tape Width
-
Quantity
30
Electrical Characteristics
Symbol
Off Characteristics BVDSS BVDSS / TJ BVDS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Coss Coss eff. td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr
NOTES:
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Avalanche Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Conditions
VGS = 0V, ID = 250A, TJ = 25C VGS = 0V, ID = 250A, TJ = 150C ID = 250A, Referenced to 25C VGS = 0V, ID = 16A VDS = 600V, VGS = 0V VDS = 480V, TC = 125C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 8A VDS = 40V, ID = 8A VDS = 25V, VGS = 0V, f = 1.0MHz
(Note 4)
Min
600 -------3.0 ----------(Note 4, 5)
Typ
-650 0.6 700 -----0.22 11.5 1730 960 85 45 110 42 130 165 90 55 10.5 28
Max Units
----1 10 100 -100 5.0 0.26 -2250 1150 -60 -85 270 340 190 70 13 -V V V/C V A A nA nA V S pF pF pF pF pF ns ns ns ns nC nC nC
On Characteristics
Dynamic Characteristics
VDS = 480V, VGS = 0V, f = 1.0MHz VDS = 0V to 400V, VGS = 0V VDD = 300V, ID = 16A RG = 25
Switching Characteristics
-----
VDS = 480V, ID = 16A VGS = 10V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 16A VGS = 0V, IS = 16A dIF/dt =100A/s
(Note 4)
------
---435 7.0
16 48 1.4 ---
A A V ns C
1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 8A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 16A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics
FCA16N60 REV. A
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FCA16N60 600V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
10
2
Figure 2. Transfer Characteristics
10
2
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top :
ID , Drain Current [A]
ID, Drain Current [A]
10
1
10
1
150C
25C 10
0
-55C
Note
10
0
Notes :
1. 250S Pulse Test 2. TC = 25C
1. VDS = 40V 2. 250s Pulse Test
10
-1
10
0
10
1
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue
10
2
0.6
0.5
RDS(ON) [O ],
0.4
VGS = 10V
IDR , Reverse Drain Current [A]
Drain-Source On-Resistance
10
1
0.3
VGS = 20V
0.2
10
0
150C
25C
Notes :
0.1
Note : TJ = 25 C
1. VGS = 0V 2. 250 s Pulse Test
0.0
0
5
10
15
20
25
30
35
40
45
50
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID, Drain Current [A]
VSD , Source-Drain Voltage [V]
Figure 5. Capacitance Characteristics
7000
Ciss = Cgs + Cgd (Cds = shorted)
Figure 6. Gate Charge Characteristics
12
6000 5000
Coss = Cds + Cgd
VGS, Gate-Source Voltage [V]
Crss = Cgd
10
VDS = 100V VDS = 250V VDS = 480V
Capacitance [pF]
4000 3000 2000 1000 0 -1 10
Coss
Notes :
8
6
Ciss
1. VGS = 0 V 2. f = 1 MHz
4
Crss
2
Note : ID = 16A
10
0
10
1
0
0
10
20
30
40
50
60
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
FCA16N60 REV. A
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FCA16N60 600V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2
3.0
Figure 8. On-Resistance Variation vs. Temperature
BVDSS, (Normalized) Drain-Source Breakdown Voltage
Drain-Source On-Resistance
2.5
1.1
RDS(ON), (Normalized)
2.0
1.0
1.5
0.9
Notes :
1.0
Notes :
1. VGS = 0 V 2. ID = 250 A
0.5
1. VGS = 10 V 2. ID = 8 A
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
20
Figure 10. Maximum Drain Current vs. Case Temperature
10
2
Operation in This Area is Limited by R DS(on)
10 us 100 us
ID, Drain Current [A]
15
10
1
1 ms DC
ID, Drain Current [A]
10
3
10
0
10
Notes :
10
-1
1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
o
5
10
-2
10
0
10
1
10
2
0 25
50
75
100
125
150
VDS, Drain-Source Voltage [V]
TC, Case Temperature [C]
Figure 11. Transient Thermal Response Curve
10
0
(t), Thermal Response
D = 0 .5
N o te s :
0 .2
10
-1
1. Z?
JC
(t) = 0 .7 5 C /W M a x. (t)
0 .1 0 .0 5 0 .0 2 0 .0 1
2 . D u ty F a c to r, D = t 1 /t 2 3 . T JM - T C = P DM * Z ?
JC
JC
PDM
s in g le p u ls e
Z?
10
-2
t1
t2
10
0
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
FCA16N60 REV. A
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FCA16N60 600V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FCA16N60 REV. A
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FCA16N60 600V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ V
DS
_ I
SD
L D r iv e r R
G
S am e T ype as DUT
V
DD
V
GS
* d v / d t c o n t r o lle d b y R G * I S D c o n t r o lle d b y p u ls e p e r io d
V GS ( D r iv e r )
G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d
10V
I F M , B o d y D io d e F o r w a r d C u r r e n t
I SD (DUT ) IR M
d i/ d t
B o d y D io d e R e v e r s e C u r r e n t
V DS (DUT )
B o d y D io d e R e c o v e r y d v / d t
V
SD
V
DD
B o d y D io d e F o r w a r d V o lt a g e D r o p
FCA16N60 REV. A
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FCA16N60 600V N-Channel MOSFET
Mechanical Dimensions
TO-3P
15.60 0.20 3.80 0.20 13.60 0.20 o3.20 0.10 9.60 0.20 4.80 0.20 1.50 -0.05
+0.15
12.76 0.20
19.90 0.20
16.50 0.30
3.00 0.20 1.00 0.20
3.50 0.20
2.00 0.20
13.90 0.20
23.40 0.20
18.70 0.20
1.40 0.20
5.45TYP [5.45 0.30]
5.45TYP [5.45 0.30]
0.60 -0.05
+0.15
Dimensions in Millimeters
FCA16N60 REV. A
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FCA16N60 600V N-Channel MOSFET
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM DISCLAIMER
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SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I17
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
8 FCA16N60 REV. A
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